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NCE N-Channel Enhancement Mode Power MOSFET
D*CRIPTION
The NCE3080K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
GENERAL FEATUR*
● VDS =30V,ID =80A
RDS(ON) < 6mΩ @ VGS=10V
RDS(ON) < 9.5mΩ @ VGS=5V
● High density cell design for ultra low Rdson
● Fully characterized Avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
Application
●
Power switching application
●
Hard Switched and High Frequency Circuits
●
Uninterruptible Power Supply